| PART |
Description |
Maker |
| PZT751T1 ON2781 PZT751T1_D PZT751T3 |
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA
SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT
From old datasheet system
|
MOTOROLA INC
ON Semi
MOTOROLA[Motorola, Inc]
|
| BCP53-16T3 BCP53-10T3 BCP53-16T1 BCP53-10T1 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | SOT-223 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|的SOT - 223
|
NXP Semiconductors N.V.
|
| PZTA92T1G |
High Voltage Transistor; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA
|
Rectron Semiconductor
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| 20CJQ060 20CJQ060TR |
60V 2A Schottky Common Cathode Diode in a SOT-223 package
|
International Rectifier
|
| BSP317Q67000-S94 |
TRANSISTOR MOSFET SMD SOT 223 晶体管MOSFET的贴片采用SOT 223
|
EM Microelectronic
|
| STN3P6F6 |
P-channel 60 V, 0.13 Ω typ., 3 A STripFET VI DeepGATE Power MOSFET in a SOT-223 package
|
STMicroelectronics
|
| IRFL024Z |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRLL014N IRLL014NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| PBSS5160T |
Silicon PNP transistor in a SOT-23 Plastic Package
|
Foshan Blue Rocket Elec...
|
| AUIRLL024ZTR |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package
|
International Rectifier
|
| AUIRLL024N |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package
|
International Rectifier
|
